The TM1016 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, low power consumption, high efficiency amplifier IC designed for IEEE 802.11a, ETC, Wireless Audio/Video and other application in the 5.8GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power control circuit for closed loop control of output power. The TM1016 is packaged in a compact 2mm by 2mm DFN package with a backside ground.

The TM2006 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and a RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The PA delivers +22.5dBm (maximum) output power with a high Power Added Efficiency (PAE) 32%. The noise figure of LNA is below 1.8dB. The RF SPDT Switch has very low insertion loss 0.4dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package.