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我們主要採用砷化鎵製程發展低成本、高頻、高功率、低雜訊之MMIC/MCM/SiP 以及各種混成電路模組,可協助顧客應用於無線通訊相關應用產品。

  TM1001 - 2.4GHz Power Amplifier IC with Power Detector
 

The TM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, medium power, high efficiency amplifier IC designed for IEEE 802.11b/g, Bluetooth Class 1, and other application in the 2.4GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power detector circuit for closed loop control of output power. The TM1001 is packaged in a compact 3mm by 3mm QFN package with a backside ground.

 

  TM1010 - 2.4GHz Front End MMIC including PA and LNA
 

The TM1010 is a front-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end IC consists of a Power Amplifier (PA) and Low-Noise Amplifier (LNA). This device makes it ideal for IEEE 802.11.b/g, Bluetooth, Wireless Data Terminal and portable battery powered equipment. The PA delivers +23dBm (maximum) output power with a high Power Added Efficiency (PAE) 41%. The Gain is 13dB and noise figure of LNA is below 1.6dB in the 2.4GHz ~2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package. 

 

  TM2006 2.4GHz Front End Module with Antenna RF switch
 
TM2006

 The TM2006 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and a RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The PA delivers +22.5dBm (maximum) output power with a high Power Added Efficiency (PAE) 32%. The noise figure of LNA is below 1.8dB. The RF SPDT Switch has very low insertion loss 0.4dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package.

 

  TM2009 2.4-2.5GHz RF Front-End Module
 
TM2009

The TM2009 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and two RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The PA delivers +23dBm (maximum) output power with a high Power Added Efficiency (PAE) 41%. The noise figure of LNA is below 1.8dB. The RF SPDT Switch has very low insertion loss 0.4dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 4mm by 4mm 20L package.

 

  TM3001 2.4GHz RF switch SPDT in SOT-363 package
 
TM3001

The TM3001 is a GaAs SPDT switch MMIC in a SOT-363 6 lead plastic package.

The TM3001 features low insertion loss and positive voltage operation with low

DC power consumption. Typical applications are for the variety of analog and

digital wireless communication systems.

 

 

 

 

 

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