電話:(03)577-1098 傳真:(03)577-8539 email:sales@taiwanmicro.com.tw
我們主要採用砷化鎵製程發展低成本、高頻、高功率、低雜訊之MMIC，可協助顧客應用於無線通訊相關應用產品。
The TM1001 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC, designed for wireless data application between 902MHz and 928MHz and 2.4 to 2.5GHz.