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我們主要採用砷化鎵製程發展低成本、高頻、高功率、低雜訊之MMIC,可協助顧客應用於無線通訊相關應用產品。
The TM1011 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, hig gain, high linearity amplifier IC, designed for 2.4 to 2.5GHz 802.11.b/g/n WIFI system.