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我們主要採用砷化鎵製程發展低成本、高頻、高功率、低雜訊之MMIC，可協助顧客應用於無線通訊相關應用產品。
The TM1013 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency amplifier IC designed for wireless data application over ISM band. The device is packaged in a compact QFN 2mm by 2mm 8L package.