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我們主要採用砷化鎵製程發展低成本、高頻、高功率、低雜訊之MMIC，可協助顧客應用於無線通訊相關應用產品。
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TM1001 - 2.4GHz Power Amplifier IC with Power Detector |
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The TM1001 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC, designed for wireless data application between 902MHz and 928MHz and 2.4 to 2.5GHz. |
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TM1005 - 4.95GHz~5.85GHz ISM Band Power Amplifier |
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The TM1005 is a high performance GaAs HBT IC amplifier that operates from 4.95 to 5.85GHz. This 3-stage amplifier provides 28 dB min small signal gain and 1-dB gain compression power output of +26 dBm. The input of the PA is matched to 50 ohms and the output can be easily matched for optimum linearity and power performance at the desired frequency of operation between 4.95GHz and 5.85GHz with one shunt capacitor. The part operates off a single+3.3V supply. At a 4.5V supply P1dB is 30 dBm with 28dB Gain. Applications include WLAN 802.11a, 5.8GHz Cordless Phone and HiperLAN2. |
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TM1006 - 3GHz Low Noise Amplifier MMIC for GPS |
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The TM1006 is a low cost, low noise amplifier IC, designed for GPS (Global Positioning System) application in 1.57542GHz. The device is packaged in a compact 3mm by 3mm leadless package. |
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TM1007 - 2.4GHz Power Amplifier MMIC |
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The TM1007 is a low cost, high power, high efficiency amplifier IC designed for wireless data application at 2.4 to 2.5GHz ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package. This high linearity device makes it ideal for IEEE 802.11.b/g, Wireless Data Terminal and portable battery powered equipment. |
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TM1008 - DC to 3GHz RF Transistor |
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The TM1008 is a low cost, low noise transistor. It can be designed for Low Noise Amplifier or Gain Block. This device is packaged in SOT343. |
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TM1009 - 3GHz Low Noise Amplifier MMIC |
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The TM1009 is a low cost and low noise amplifier (LNA) IC, designed for GPS, DVB, PHS and DECT applications in L Band.The device is packaged in a compact 2mm by 2mm leadless package. |
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TM1010 - 2.4GHz Front End MMIC including PA and LNA |
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The TM1010 is a fornt-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end consists of a Power Amplifier (PA) and Low-Noise Amplifier (LNA). This device makes it ideal for IEEE 802.11.b/g, Bluetooth, Wireless Data Terminal and portable battery powered equipment. |
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TM1013 - WLAN 802.11b/g High Gain Power Amplifier |
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The TM1013 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency amplifier IC designed for wireless data application over ISM band. The device is packaged in a compact QFN 2x2mm-8L package. |
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TM2001 - 2.4GHz RF Front End Module |
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The TM2001 manufactured on LTCC technology is a high integration front-end module for wireless data application between 2.4 to 2.5GHz ISM band. Consisting of a low noise amplifier and high efficiency power amplifier. |
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