The TM2006 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and a RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The PA delivers +22.5dBm (maximum) output power with a high Power Added Efficiency (PAE) 32%. The noise figure of LNA is below 1.8dB. The RF SPDT Switch has very low insertion loss 0.4dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package.

 The TM1011 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency amplifier IC designed for wireless data application over ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package. This high linearity device makes it ideal for IEEE 802.11b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in a portable equipment. The power control function with an integrated power detector also eliminates the need of directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.

 The TM1010 is a fornt-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end consists of a Power Amplifier (PA) and Low-Noise Amplifier (LNA). This device makes it ideal for IEEE 802.11.b/g, Bluetooth, Wireless Data Terminal and portable battery powered equipment. The PA delivers +23dBm (maximum) output power with a high Power Added Efficiency (PAE) 41%. The noise figure of LNA is below 2dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package. 

 The TM1008 is a low cost, low noise transistor and packaged in SOT343. It can be designed for Low Noise Amplifier or Gain Block. This product can be used in the application which frequency band is during DC to 3GHz.

 The TM1007 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC designed for wireless data application at 2.4 to 2.5GHz ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package. This high linearity device makes it ideal for IEEE 802.11.b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment with 200mW transmit power at antenna port. The power control function also eliminates the need for directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.