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TEL:+886-3-5771098
FAX:+886-3-5778539
Email:sales@taiwanmicro.com.tw

TEL:+886-3-5771098
FAX:+886-3-5778539
Email:sales@taiwanmicro.com.tw

 

 

Product List

TM5200 is a Bluetooth stereo Audio Module with TWS function with fully-certified Bluetooth® Version 4.2 (BDR/EDR) for who wants to add Bluetooth® wireless audio and voice applications to products. This Bluetooth module provides a complete wireless solution with Bluetooth stack, integrated antenna, and worldwide radio certifications in a compact surface mount package, 20x15x2.5 mm3. This stereo module built-in Li-Ion charger and contain a digital audio interface. It supports HSP, HFP, SPP, A2DP, and AVRCP profiles. Both AAC and SBC codecs are supported for A2DP. Note that the customer must connect their own external analog CODEC/DSP/amplifier and MCU for audio output.

 

The TM5200 module is a low power consumption, highly integrated Bluetooth system as an audio module. It integrates a high performance antenna, crystal and Bluetooth chip, which included RF transceiver, baseband processor, FLASH memory controller, multiple analog and digital peripherals, and a Bluetooth software stack including the audio, voice, and SPP profiles.

TM5200 is a Bluetooth stereo Audio Module with TWS function with fully-certified Bluetooth® Version 4.2 (BDR/EDR) for who wants to add Bluetooth® wireless audio and voice applications to products. This Bluetooth module provides a complete wireless solution with Bluetooth stack, integrated antenna, and worldwide radio certifications in a compact surface mount package, 20x15x2.5 mm3. This stereo module built-in Li-Ion charger and contain a digital audio interface. It supports HSP, HFP, SPP, A2DP, and AVRCP profiles. Both AAC and SBC codecs are supported for A2DP. Note that the customer must connect their own external analog CODEC/DSP/amplifier and MCU for audio output.

 

The TM5200 module is a low power consumption, highly integrated Bluetooth system as an audio module. It integrates a high performance antenna, crystal and Bluetooth chip, which included RF transceiver, baseband processor, FLASH memory controller, multiple analog and digital peripherals, and a Bluetooth software stack including the audio, voice, and SPP profiles.

  TM1001 - 2.4GHz Power Amplifier IC with Power Detector
 

The TM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, medium power, high efficiency amplifier IC designed for IEEE 802.11b/g, Bluetooth Class 1, and other application in the 2.4GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power detector circuit for closed loop control of output power. The TM1001 is packaged in a compact 3mm by 3mm QFN package with a backside ground.

 

  TM1002 Low-Noise Amplifier with bypass switch for 2.3~2.7 GHz receiver applicati
 

 The TM1002 is a Low-Noise Amplifier (LNA) with bypass switch for 2.3~2.7 GHz receiver applications, available in a 1.1x0.7mm WLCSP. This product is only used in an over molded module. The TM1002 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of transmit power level in FDD systems. To lower power consumption it provides sufficient receive signal strength. The TM1002 can be switched off to operate in bypass mode at a 1μA current. The TM1002 requires only one external matching inductor. The TM1002 is optimized for 2300 MHz to 2690 MHz

 

  TM1002 Low-Noise Amplifier with bypass switch for 2.3~2.7 GHz receiver applicati
 

 The TM1002 is a Low-Noise Amplifier (LNA) with bypass switch for 2.3~2.7 GHz receiver applications, available in a 1.1x0.7mm WLCSP. This product is only used in an over molded module. The TM1002 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of transmit power level in FDD systems. To lower power consumption it provides sufficient receive signal strength. The TM1002 can be switched off to operate in bypass mode at a 1μA current. The TM1002 requires only one external matching inductor. The TM1002 is optimized for 2300 MHz to 2690 MHz

 

  TM1006 - Low Noise Amplifier MMIC for GPS
 

The TM1006 is a low cost, low noise amplifier IC, designed for GPS (Global Positioning System) application in 1.57542GHz. The device is packaged in a compact 3mm by 3mm leadless package.

 

  TM1007 - 2.4GHz Power Amplifier MMIC
 

The TM1007 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC designed for wireless data application at 2.4 to 2.5GHz ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package.

 

This high linearity device makes it ideal for IEEE 802.11.b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment with 200mW transmit power at antenna port. The power control function also eliminates the need for directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.

 

  TM1008 - DC to 3GHz RF Transistor
 

The TM1008 is a low cost, low noise transistor as a gain block, power driver and packaged in M04 package. It can be designed for Low Noise Amplifier, Gain Block and power driver stage. This product can be used in the application which frequency band is during DC to 3GHz.

 

  TM1009 ~3Ghz Low Noise Amplifier MMIC in 1.5x1.5mm DFN package
 

The TM1009 is a low cost and low noise amplifier (LNA) IC, designed for GPS, DVB, PHS and DECT applications in L Band. The LNA is implemented as a two stages monolithic microwave integrated circuit (MMIC) with current limiter on chip. The low noise figure of device improves the sensitivity of the system, and very low current consumption maximizes the battery life in portable equipment. The device is packaged in a compact 1.5mm by 1.5mm leadless package

 

  TM1010-2.4GHz Front End MMIC
 

The TM1010 is a fornt-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end consists of a Power Amplifier (PA) and Low-Noise Amplifier (LNA). This device makes it ideal for IEEE 802.11.b/g, Bluetooth, Wireless Data Terminal and portable battery powered equipment.

 

  TM1011 2.4GHz High Gain Power Amplifier for 802.11.b/g/n
 

The TM1011 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency amplifier IC designed for wireless data application over ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package. This high linearity device makes it ideal for IEEE 802.11b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in a portable equipment. The power control function with an integrated power detector also eliminates the need of directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.

 

  TM1016 6GHz Low Power Consumption Power Amplifier MMIC
 

The TM1016 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, low power consumption, high efficiency amplifier IC designed for IEEE 802.11a, ETC, Wireless Audio/Video and other application in the 5.8GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power control circuit for closed loop control of output power. The TM1016 is packaged in a compact 2mm by 2mm DFN package with a backside ground.

 


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