TM use GaAs technology to develop high frequency, high power and low noise front end MMIC. Our products can be applied in all kind of wireless communication system. All our products already employed R

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We use GaAs technology to develop high frequency, high power and low noise front end MMIC. Our products can be applied in all kind of wireless communication system. All our products already employed RoHS compliant and free process from 2005.

	TM1001 - 2.4GHz Power Amplifier IC with Power Detector

	The TM1001 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC, designed for wireless data application between 902MHz and 928MHz and 2.4 to 2.5GHz.

	TM1010-2.4GHz Front End MMIC

	The TM1010 is a fornt-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end consists of a Power Amplifier (PA) and Low-Noise Amplifier (LNA). This device makes it ideal for IEEE 802.11.b/g, Bluetooth, Wireless Data Terminal and portable battery powered equipment.

	TM2001 – 2.4GHz RF Front End Module

	The TM2001 manufactured on LTCC technology is a high integration front-end module for wireless data application between 2.4 to 2.5GHz ISM band. Consisting of a low noise amplifier and high efficiency power amplifier.

	TM2003 – 2.3GHz Low power consumption RF Front End

	The TM2003 manufactured on LTCC technology is a high integration front-end module for wireless data application between 2.4 to 2.5GHz ISM band. Consisting of a low noise amplifier and high efficiency power amplifier.

	TM2006 – 2.4GHz RF Front End Module

	The TM2006 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and a RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment.