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TEL:+886-3-5771098
FAX:+886-3-5778539
Email:sales@taiwanmicro.com.tw

TEL:+886-3-5771098
FAX:+886-3-5778539
Email:sales@taiwanmicro.com.tw

 

 

Product List

TM5200 is a Bluetooth stereo Audio Module with TWS function with fully-certified Bluetooth® Version 4.2 (BDR/EDR) for who wants to add Bluetooth® wireless audio and voice applications to products. This Bluetooth module provides a complete wireless solution with Bluetooth stack, integrated antenna, and worldwide radio certifications in a compact surface mount package, 20x15x2.5 mm3. This stereo module built-in Li-Ion charger and contain a digital audio interface. It supports HSP, HFP, SPP, A2DP, and AVRCP profiles. Both AAC and SBC codecs are supported for A2DP. Note that the customer must connect their own external analog CODEC/DSP/amplifier and MCU for audio output.

 

The TM5200 module is a low power consumption, highly integrated Bluetooth system as an audio module. It integrates a high performance antenna, crystal and Bluetooth chip, which included RF transceiver, baseband processor, FLASH memory controller, multiple analog and digital peripherals, and a Bluetooth software stack including the audio, voice, and SPP profiles.

TM5200 is a Bluetooth stereo Audio Module with TWS function with fully-certified Bluetooth® Version 4.2 (BDR/EDR) for who wants to add Bluetooth® wireless audio and voice applications to products. This Bluetooth module provides a complete wireless solution with Bluetooth stack, integrated antenna, and worldwide radio certifications in a compact surface mount package, 20x15x2.5 mm3. This stereo module built-in Li-Ion charger and contain a digital audio interface. It supports HSP, HFP, SPP, A2DP, and AVRCP profiles. Both AAC and SBC codecs are supported for A2DP. Note that the customer must connect their own external analog CODEC/DSP/amplifier and MCU for audio output.

 

The TM5200 module is a low power consumption, highly integrated Bluetooth system as an audio module. It integrates a high performance antenna, crystal and Bluetooth chip, which included RF transceiver, baseband processor, FLASH memory controller, multiple analog and digital peripherals, and a Bluetooth software stack including the audio, voice, and SPP profiles.

  TM1001 - 2.4GHz Power Amplifier IC with Power Detector
 

The TM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, medium power, high efficiency amplifier IC designed for IEEE 802.11b/g, Bluetooth Class 1, and other application in the 2.4GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power detector circuit for closed loop control of output power. The TM1001 is packaged in a compact 3mm by 3mm QFN package with a backside ground.

 

  TM1007 - 2.4GHz Power Amplifier MMIC
 

The TM1007 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC designed for wireless data application at 2.4 to 2.5GHz ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package.

 

This high linearity device makes it ideal for IEEE 802.11.b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment with 200mW transmit power at antenna port. The power control function also eliminates the need for directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.

 

  TM1010-2.4GHz Front End MMIC
 

The TM1010 is a fornt-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end consists of a Power Amplifier (PA) and Low-Noise Amplifier (LNA). This device makes it ideal for IEEE 802.11.b/g, Bluetooth, Wireless Data Terminal and portable battery powered equipment.

 

  TM1011 2.4GHz High Gain Power Amplifier for 802.11.b/g/n
 

The TM1011 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency amplifier IC designed for wireless data application over ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package. This high linearity device makes it ideal for IEEE 802.11b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in a portable equipment. The power control function with an integrated power detector also eliminates the need of directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.

 

  TM2006 – 2.4GHz RF Front End Module
 

The TM2006 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and a RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment.

 

  TM2008 2.4-2.5GHz FEM with high Gain LNA
 

 The TM2008 is a front-end Multi-Chip Module(MCM) and uses advanced Gallium Arsenide (GaAs) process. The front-end module(FEM) consists of a Low Noise Amplifier (LNA), and two RF single pole double throw (SPDT) Switches. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The LNA delivers +20dB Gain with low current consumption and low noise figure below 1.8 dB. And the RF SPDT Switch has very low insertion loss 0.4dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package.

 

  TM2009 2.4-2.5GHz RF Front-End Module
 
TM2009

 The TM2009 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and two RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE 802.11.b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The PA delivers +23dBm (maximum) output power with a high Power Added Efficiency (PAE) 41%. The noise figure of LNA is below 1.8dB. The RF SPDT Switch has very low insertion loss 0.4dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package. 

 

  TM3001 - GaAs MMIC SPDT Switch DC – 3GHz
 

The TM3001 is a GaAs MMIC SPDT switch in a SOT-363 6 lead plastic package. The TM3001 features low insertion loss and positive voltage operation with low DC power consumption. Typical applications are for the variety of analog and digital wireless communication systems.

 

  TM3005 GaAs MMIC SPDT Switch DC – 6GHz
 

The TM3005 is a GaAs MMIC SPDT switch in a DFN 1.5x1.5x0.75mm 6 lead plastic package. The TM3005 features low insertion loss and positive voltage operation with low DC power consumption. Typical applications are for the variety of analog and digital wireless communication systems.

 

 

 

 

 

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