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TEL:+886-3-5771098
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We use GaAs technology to develop high frequency, high power and low noise front end MMIC. Our products can be applied in all kind of wireless communication system. All our products already employed RoHS compliant and free process from 2005.

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TM1013 – WLAN 802.11b/g High Gain Power Amplifier

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The TM1013 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency amplifier IC designed for wireless data application over ISM band. The device is packaged in a compact QFN 2mm by 2mm 8L package.

Download： Data Sheet